Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Advanced Silicon Carbide (SiC) Deep RIE
Process characteristics:
Depth
Depth*
must be 0.1 .. 500 µm
0.1 .. 500 µm
Batch size 1
Etch rate 0.9 µm/min
Etch type dry anisotropic
Material silicon carbide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 copper: 130
Wafer size
Wafer size
Equipment Advanced RIE etcher
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
 alumina
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), silicon carbide, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 600 µm
Attachments
[Thumbnail]process_SEM_posts.png (707.7 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2014-02-05 16:12
SEM of vias and posts for ~150um deep etch
[Thumbnail]process_SEM_vias.png (599.9 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2014-02-05 16:12
SEM of various size vias for ~150um deep etch
[Thumbnail]process_lag_SiC.png (45.0 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2014-02-05 16:12
Process lag for 50, 100, and 200um vias