Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon dioxide ISM High Density etch
Process characteristics:
Depth
Depth*
must be 0.1 .. 3 µm
0.1 .. 3 µm
Ambient
Ambient to which substrate is exposed during processing
 argon, HBr, chlorine, boron trichloride, C4F8, carbon tetrafluoride, oxygen
Etch type dry anisotropic
Material silicon dioxide
Wafer size
Wafer size
Equipment Ulvac NE-550
  • NE-550 ISM (Inductively Super Magnetron) is a multi-purpose high-density plasma etching system, specifically designed for R&D test facilities.
  • It has an optical spectrometer for end-point control.
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 200 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), quartz (fused silica), silicon on insulator, quartz (single crystal), silicon carbide, fused silica, silicon germanium, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm