Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide dry etch
Process characteristics:
Depth
Depth*
must be 0.01 .. 3 µm
0.01 .. 3 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Batch size 1
Etch rate 0.1 .. 0.7 µm/min
Etch type dry anisotropic
Material silicon dioxide
Sides processed either
Equipment