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PECVD: Page 1 of 3

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Evaporation
  • LPCVD
  • Low-stress SiN deposition
  • Miscellaneous deposition
  • Oxidation
  • PECVD
  • Spin casting
  • Sputtering
  • Doping
  • Etch
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
PECVD
Plasma enhanced chemical vapor deposition (PECVD) is performed in a reactor at temperatures up to ~400 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. A plasma is generated in the reactor to increase the energy available for the chemical reaction at a given temperature. The process is typically performed on one side of the substrate at a time.
per page
Process
Silicon dioxide PECVD (PlasmaTherm 790+)
Silicon dioxide PECVD (Unaxis VLR 700)
Silicon nitride PECVD (PlasmaTherm 790+)
Silicon nitride PECVD (Unaxis VLR 700)
Silicon dioxide PECVD
Silicon nitride PECVD
Silicon dioxide PECVD
Silicon dioxide PECVD
Silicon nitride PECVD
Silicon Dioxide PECVD PlasmaTherm 790+
Silicon Nitride PECVD PlasmaTherm 790+
Silicon dioxide VLR700 PECVD
Silicon nitride PECVD (Unaxis VLR 700)
Amorphous silicon PECVD
Silicon dioxide PECVD (TEOS)
Silicon nitride PECVD
Silicon Nitride PECVD (STS)
Silicon dioxide PECVD (STS)
TEOS PECVD (STS)
Silicon dioxide PECVD (TEOS)
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